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Proceedings Paper

Interface properties of HgCdTe passivated with the combination of CdS and ZnS
Author(s): Gehong Zeng; Jingshao Zhang; Tianzhu Shen
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Paper Abstract

The process for forming CdS and ZnS films on n and p type of HgCdTe with x - 0.218 in aqueous sulfide solutions is described. The XPS analysis was carried out and photodiodes passivated with deferent thickness of sulfide were fabricated to assess the validity of the procedure. The results indicate that the native sulfide layers formed in this way show almost the same properties as those grown in nonaqueous solutions.

Paper Details

Date Published: 25 September 1996
PDF: 4 pages
Proc. SPIE 2894, Detectors, Focal Plane Arrays, and Applications, (25 September 1996); doi: 10.1117/12.252086
Show Author Affiliations
Gehong Zeng, Kunming Research Institute of Physics (China)
Jingshao Zhang, Kunming Research Institute of Physics (China)
Tianzhu Shen, Kunming Research Institute of Physics (China)


Published in SPIE Proceedings Vol. 2894:
Detectors, Focal Plane Arrays, and Applications
William G. D. Frederick; Junhong Su; Marc Wigdor, Editor(s)

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