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Proceedings Paper

Study of GaAs/GaAlAs infrared photodectors with novel characteristics
Author(s): Chun-Xia Du; Jun Deng; Qun Li; Rui Kong; Dong-Feng Wang; Chen Xu; Guangdi Shen; Jie Yin
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Paper Abstract

A new type of GaAs/GaAlAs infrared photodetectors based on a new physics mechanism has been designed. Its simulation, manufacture, experiment measurements and analyses have been performed. Some novel important characteristics are obtained which are compared with the conventional GaAs/GaAlAs quantum well infrared photodetectors, such as, its low dark current, large absorption bandwidth, high response speed, low noise, and the choice of suitable operation bias. From our elementary work, the novel features of this kind of device will be very attractive in the application.

Paper Details

Date Published: 25 September 1996
PDF: 5 pages
Proc. SPIE 2894, Detectors, Focal Plane Arrays, and Applications, (25 September 1996); doi: 10.1117/12.252085
Show Author Affiliations
Chun-Xia Du, Beijing Polytechnic Univ. (China)
Jun Deng, Beijing Polytechnic Univ. (China)
Qun Li, Beijing Polytechnic Univ. (China)
Rui Kong, Beijing Polytechnic Univ. (China)
Dong-Feng Wang, Beijing Polytechnic Univ. (China)
Chen Xu, Beijing Polytechnic Univ. (China)
Guangdi Shen, Beijing Polytechnic Univ. (China)
Jie Yin, North China Research Institute of Electro-Optics (China)


Published in SPIE Proceedings Vol. 2894:
Detectors, Focal Plane Arrays, and Applications
William G. D. Frederick; Junhong Su; Marc Wigdor, Editor(s)

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