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Fabrication of the drift-enhanced InGaAs p-i-n photodetectors
Author(s): G. Y. Li; B. Niu; X. W. Gu; Y. Wang; Y. C. Kong
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Paper Abstract

We have demonstrated a class of drift-enhanced InGaAs/InP p-i-n photodetectors with the top-illuminated light in the 1550 nm wavelength band. An InGaAsP layer is used at the InGaAs/InP hetero-interface to reduce the contact resistivity. For devices of 10 μm × 10 μm, 20 μm × 20 μm and 30 μm × 30 μm mesa areas, the 3-dB bandwidths are measured to be 32 GHz, 12 GHz and 6 GHz, respectively. Also we have obtained a dark current of 64 nA and a responsivity of 0.43 A/W at -4 V bias for 10 μm × 10 μm photodetector.

Paper Details

Date Published: 12 March 2019
PDF: 4 pages
Proc. SPIE 11023, Fifth Symposium on Novel Optoelectronic Detection Technology and Application, 1102345 (12 March 2019); doi: 10.1117/12.2520586
Show Author Affiliations
G. Y. Li, Nanjing Electronic Devices Institute (China)
B. Niu, Nanjing Electronic Devices Institute (China)
X. W. Gu, Nanjing Electronic Devices Institute (China)
Y. Wang, Nanjing Electronic Devices Institute (China)
Y. C. Kong, Nanjing Electronic Devices Institute (China)


Published in SPIE Proceedings Vol. 11023:
Fifth Symposium on Novel Optoelectronic Detection Technology and Application
Qifeng Yu; Wei Huang; You He, Editor(s)

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