Share Email Print
cover

Proceedings Paper • new

Effects of vacuum-plasma etching on the electrical properties of thin ferroelectric PZT films
Author(s): D. A. Abdullaev; D. S. Seregin; D. N. Zubov; K. A. Vorotilov
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Effects of vacuum plasma etching with subsequent thermal annealing on electrical properties of thin ferroelectric lead zirconate-titanate films are studied. It is shown that vacuum plasma etching leads to the decrease of electrical properties of the films due to defects formation. It is found that defects induced by ion-beam and reactive-ion etching demonstrate different behavior after the high temperature post-annealing. The annealing after reactive-ion etching leads to practically complete recovering of the film’s properties, whereas the films annealed after ion-beam etching degrade even more. Polarization properties of the films after vacuum plasma etching are studied by piezo-force microscopy.

Paper Details

Date Published: 15 March 2019
PDF: 7 pages
Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110221B (15 March 2019); doi: 10.1117/12.2520548
Show Author Affiliations
D. A. Abdullaev, Institute of Nanotechnology of Microelectronics (Russian Federation)
MIREA - Russian Technological Univ. (Russian Federation)
D. S. Seregin, MIREA - Russian Technological Univ. (Russian Federation)
D. N. Zubov, Institute of Nanotechnology of Microelectronics (Russian Federation)
K. A. Vorotilov, MIREA - Russian Technological Univ. (Russian Federation)


Published in SPIE Proceedings Vol. 11022:
International Conference on Micro- and Nano-Electronics 2018
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

© SPIE. Terms of Use
Back to Top