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New structure of semiconductor lasers: quantum-cascade vertical-cavity surface-emitting laser (QC VCSEL)
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Paper Abstract

A new structure of semiconductor lasers called the quantum-cascade vertical-cavity surface emitting laser (QC VCSEL) is proposed in the present paper. A structure of the QC VCSEL is a cross of the quantum-cascade laser (QCL) and the vertical-cavity surface-emitting laser (VCSEL). The QC VCSEL is expected to demonstrate important advantages of laser emission of both the QCL and the VCSEL without their drawbacks. In the QC VCSEL, the monolithic highcontrast grating (MHCG) structure is applied to cope with the fundamental requirement of the polarization direction of the electro-magnetic radiation perpendicular to the quantum cascade (QC) necessary to initiate within it the stimulated emission. The QC VCSEL structure recommended in the present paper is a result of the advanced modeling with the aid of our comprehensive self-consistent optical-electrical model.

Paper Details

Date Published: 4 December 2018
PDF: 8 pages
Proc. SPIE 10974, Laser Technology 2018: Progress and Applications of Lasers, 109740A (4 December 2018); doi: 10.1117/12.2519617
Show Author Affiliations
Włodzimierz Nakwaski, Lodz Univ. of Technology (Poland)
Sandra Grzempa, Lodz Univ. of Technology (Poland)
Maciej Dems, Lodz Univ. of Technology (Poland)
Tomasz Czyszanowski, Lodz Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 10974:
Laser Technology 2018: Progress and Applications of Lasers
Jan K. Jabczynski; Ryszard S. Romaniuk, Editor(s)

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