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Proceedings Paper

Deep levels in HgCdTe photodetectors
Author(s): Junyong Kang; Qisheng Huang
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Paper Abstract

Hg1-xCdxTe infrared photodetectors with high CdTe mole fraction of x equals 0.50-0.65 were studied by deep level transient spectroscopy and photocapacitance measurement. Two electron traps, E1 and E2, were observed in all samples. The thermal emission activation energies and capture barriers of the two electron traps were determined by DLTS and were observed to depend on CdTe mole fraction x. In the sample with CdTe mole fraction of x equals 0.60, the binding energies of E1 and E2 are about 0.30 and 0.45 eV, respectively. At nearly the same values of the binding energies, the capacitance changes also appeared in the steady-state photocapacitance spectra of the samples, which indicates the small lattice relaxation of the two electron traps. The physical origins of the electron traps are discussed.

Paper Details

Date Published: 24 September 1996
PDF: 5 pages
Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); doi: 10.1117/12.251923
Show Author Affiliations
Junyong Kang, Xiamen University (China)
Qisheng Huang, Xiamen University (China)


Published in SPIE Proceedings Vol. 2886:
Semiconductor Lasers II
Siamak Forouhar; Qiming Wang, Editor(s)

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