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Proceedings Paper

0.808-um InGaAsP/GaAs SCH lasers
Author(s): Baoren Zhu; Xingde Zhang; Baoxue Bo; Baoshun Zhang; Zonghe Yang
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Paper Abstract

This paper presents new results obtained recently in studies of separate confinement structure InGaAsP/lasers. Using Russia's technology, the InGaAsP/GaAs lasers based on QW structure can be produced y a short-time liquid phase epitaxy employing a modified sliding boat technique. The interface abruptness in the InGaAsP/GaAs lasers can be made comparable to the lattice constant. Using 100 GaAs substrates, InGaAsP/GaAs SCH SQW lasers were fabricated and the following values of the main parameters were obtained: lasing wavelength (lambda) equals 808 micrometers , threshold current density Jth equals 100A/cm2, and power conversion efficiency N $eq 56 percent at a CW power of 1W for a laser with a stripe width W equals 100micrometers .

Paper Details

Date Published: 24 September 1996
PDF: 4 pages
Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); doi: 10.1117/12.251922
Show Author Affiliations
Baoren Zhu, Changchun Institute of Optics and Fine Mechanics (China)
Xingde Zhang, Changchun Institute of Optics and Fine Mechanics (China)
Baoxue Bo, Changchun Institute of Optics and Fine Mechanics (China)
Baoshun Zhang, Changchun Institute of Optics and Fine Mechanics (China)
Zonghe Yang, Changchun Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 2886:
Semiconductor Lasers II
Siamak Forouhar; Qiming Wang, Editor(s)

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