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Proceedings Paper

MBE growth of high-quality GaAs heterostructures for optoelectronic devices
Author(s): Zengqi Zhou; Yaowang Lin; Zhichuan Niu; Chao Yong Li
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Paper Abstract

The purity of GaAs grown by MBE was improved significantly when the MBE system was modified. The AlGaAs/GaAs quantum well heterostructures for mid-infrared detectors and two color infrared detector and InGaAs/GaAs quantum well heterostructure for vertical cavity surface emitting laser were grown successfully.

Paper Details

Date Published: 24 September 1996
PDF: 6 pages
Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); doi: 10.1117/12.251921
Show Author Affiliations
Zengqi Zhou, Institute of Semiconductors (China)
Yaowang Lin, Institute of Semiconductors (China)
Zhichuan Niu, Institute of Semiconductors (China)
Chao Yong Li, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 2886:
Semiconductor Lasers II
Siamak Forouhar; Qiming Wang, Editor(s)

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