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Proceedings Paper

Application of Zn diffusion in reducing the series resistance of the P-distributed Bragg reflector in GaAs/GaA1As vertical cavity surface emitting lasers
Author(s): Honghai Gao; ShiMing Lin; Junhua Gao; Xuejun Kang; Hongjie Wang; Lixuan Wan
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Paper Abstract

Due to the potential barriers in the heterointerfaces of quarter wavelength stack layers of the distribute Bragg reflector (DBR) in vertical cavity surface emitting lasers, P-DBR has a very large series resistance. The paper reported a method of reducing this series resistance by Zn diffusion. By this way, we have achieved continue wave vertical cavity surface emitting lasers.

Paper Details

Date Published: 24 September 1996
PDF: 4 pages
Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); doi: 10.1117/12.251920
Show Author Affiliations
Honghai Gao, Institute of Semiconductors (China)
ShiMing Lin, Institute of Semiconductors (China)
Junhua Gao, Institute of Semiconductors (China)
Xuejun Kang, Institute of Semiconductors (China)
Hongjie Wang, Institute of Semiconductors (China)
Lixuan Wan, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 2886:
Semiconductor Lasers II
Siamak Forouhar; Qiming Wang, Editor(s)

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