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Proceedings Paper

Investigation of quantum well lasers which have superlattice buffer layer
Author(s): Fuhou Zhang; Ke Song; Jianping Xing; Xiutian Hao; YiPing Zeng
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Paper Abstract

Single quantum well AlGaAs/GaAs semiconductor lasers which have superlattice buffer layer have been fabricated by MBE. The experimental results how that the superlattice buffer layer can effectively bury the substrate defects and well interface can be achieved. The lasers can work continuously at room temperature, the operating wavelength is 780 +/- 2 nm and the lowest threshold current at room temperature is 30 mA, the output power with uncoated facets is greater than 20mW.

Paper Details

Date Published: 24 September 1996
PDF: 4 pages
Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); doi: 10.1117/12.251919
Show Author Affiliations
Fuhou Zhang, Shandong Univ. of Technology (China)
Ke Song, Shandong Univ. of Technology (China)
Jianping Xing, Shandong Univ. of Technology (China)
Xiutian Hao, Shandong Univ. of Technology (China)
YiPing Zeng, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 2886:
Semiconductor Lasers II
Siamak Forouhar; Qiming Wang, Editor(s)

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