Share Email Print
cover

Proceedings Paper

High-performance 1.3-μm laser diode by LP-MOVPE
Author(s): TongNing Li; Jin-yan Ji; Xin-min Yan; Tao Liu; Zhou Ning; Jiang Liu; Zi-li Liu; Ge-fan Huang
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The progress in 1.3 micrometers wavelength InGaAsP/InP lasers for optic fiber communication and subscriber loop applications is reviewed. By using LP-MOVPE/LPE epitaxy techniques, the performance of commercial optical devices is considerably improved. The bandwidth of the 1.3 micrometers uncooled MQW-LD module could be high to 1.6GHz, threshold current Ith < 15mA, maximum fiber output power Pf >= 20mW while uniformity, reproducible, high yield are achieved. Further by growing active layer with compressive strained structure the lowest threshold current Ith equals 3.8mA was achieved with high reflection coating and the temperature performance of the SL-MQW-LD has been greatly improved, the change of slop efficiency at 25 degrees C and 85 degrees C is less than 1 dB. Using the holographic technique a high power 1.31 micrometers InGaAsP/InP multiquantum well distributed feedback laser has also been developed. The fiber output power of butterfly packaged module with optic isolator Pf > 10mW, threshold current Ith < 18mA, slop efficiency Es > 22 percent and side mode suppression ratio SMSR > 40dB. The composite triple beat CTB < -66dBc and the composite second order CSO < -56dBc by test frequencies equals 55.25 to approximately 289.25MHz with 40 NCTA channels, the carrier to noise ration CNR > 50 dB and the relative intensity noise RIN < -160dB/Hz.

Paper Details

Date Published: 24 September 1996
PDF: 8 pages
Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); doi: 10.1117/12.251917
Show Author Affiliations
TongNing Li, Wuhan Telecommunication Devices Co. (China)
Jin-yan Ji, Wuhan Telecommunication Devices Co. (China)
Xin-min Yan, Wuhan Telecommunication Devices Co. (China)
Tao Liu, Wuhan Telecommunication Devices Co. (China)
Zhou Ning, Wuhan Telecommunication Devices Co. (China)
Jiang Liu, Wuhan Telecommunication Devices Co. (China)
Zi-li Liu, Wuhan Telecommunication Devices Co. (China)
Ge-fan Huang, Wuhan Telecommunication Devices Co. (China)


Published in SPIE Proceedings Vol. 2886:
Semiconductor Lasers II
Siamak Forouhar; Qiming Wang, Editor(s)

© SPIE. Terms of Use
Back to Top