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Proceedings Paper

1.48-μm InGaAs/InGaAsP separated confinement strained layer multiple quantum well lasers
Author(s): Haiyan An; Shuren Yang; Hong-Bo Sun; Yuheng Peng; Shiyong Liu
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Paper Abstract

In this report, InGaAs/InGaAsP separated confinement strained-layer multiple-quantum-well laser structures for 1.48micrometers emission wavelength have been grown by LP-MOVPE. The lasing characteristics of the dependence of threshold current densities on the inverse of cavity length and the dependence of threshold current on the cavity length have been studied with room temperature pulse operated broad-area lasers. To reduce the threshold current, the room temperature CW H+ ion implantation stripe lasers with varies widths have been fabricated. The stripe width dependence of threshold current for a set of these devices have also been investigated. Besides, to obtain a high output power from the front facet, we have studied the design of the facet reflective.

Paper Details

Date Published: 24 September 1996
PDF: 5 pages
Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); doi: 10.1117/12.251916
Show Author Affiliations
Haiyan An, Jilin Univ. (China)
Shuren Yang, Jilin Univ. (China)
Hong-Bo Sun, Jilin Univ. (China)
Yuheng Peng, Jilin Univ. (China)
Shiyong Liu, Jilin Univ. (China)


Published in SPIE Proceedings Vol. 2886:
Semiconductor Lasers II
Siamak Forouhar; Qiming Wang, Editor(s)

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