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Proceedings Paper

AlInGaAs/AlGaAs strained material and strained quantum well lasers grown by MBE
Author(s): ZunTu Xu; Guowen Yang; Jun-Ying Xu; Jing-Ming Zhang; Changhua Chen; Lianhui Chen; Guangdi Shen
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Paper Abstract

Recently there ar some reports on the AlInGaAs/AlGaAs material system with emission wavelength in the range of 800-890nm. The AlInGaAs/AlGaAs strained quantum well lasers are usually grown by metal-organic chemical vapor deposition and there are few of them that have been grown by solid- source molecular beam epitaxy (MBE). In this paper we report the characteristics of AlInGaAs/AlGaAs strained quantum well materials and lasers grown by MBE. A typical 10K photoluminescence spectrum with FWHM value of 10 meV is comparable with that of GaAs/AlGaAs quantum well materials. InAlGaAs/AlGaAs strained quantum well lasers with a emission wavelength of 810nm were fabricated, the threshold current density is 375 A/cm2 for broad-area lasers, and it decreases to 290 A/cm2 when the cavity length extend to 1600 micrometers an external differential quantum efficiency of 0.92 W/A and narrow perpendicular beam divergence of 32 degrees are demonstrated for the uncoated lasers with cavity length of 800 micrometers .

Paper Details

Date Published: 24 September 1996
PDF: 5 pages
Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); doi: 10.1117/12.251913
Show Author Affiliations
ZunTu Xu, Institute of Semiconductors and Beijing Polytechnic Univ. and Beijing Optoelectronics Tec (China)
Guowen Yang, Institute of Semiconductors (China)
Jun-Ying Xu, Institute of Semiconductors (China)
Jing-Ming Zhang, Institute of Semiconductors (China)
Changhua Chen, Institute of Semiconductors (China)
Lianhui Chen, Institute of Semiconductors (China)
Guangdi Shen, Beijing Polytechnic Univ. (China)


Published in SPIE Proceedings Vol. 2886:
Semiconductor Lasers II
Siamak Forouhar; Qiming Wang, Editor(s)

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