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Proceedings Paper

Operating characteristics of Al-free InGaAsP/GaAs single quantum well high-power laser
Author(s): Lijun Wang; Sheng Li Wu; Jacqueline E. Diaz; Ivan Eliashevich; Hyuk Jong Yi; Manijeh Razeghi
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Paper Abstract

The operating characteristics of Al-free InGaAsP/GaAs separate confinement heterostructure single quantum well high power laser grown by low-pressure metalorganic chemical vapor deposition are reported. The internal differential quantum efficiency (eta) i is closed 98 percent. The external differential quantum efficiency (eta) d of 75 percent and characteristics temperature To of 146 degrees C are achieved, CW total output power both facets of 2.6 W single quantum well laser with 100 micrometers width, 1.1 mm cavity length is obtained. Threshold current density Jth, reciprocal differential quantum efficiency l/(eta) d, emission wavelength (lambda) and characteristics temperature To as function of laser cavity length L respectively have been measured and researched. Dependence of Jth (T), (lambda) (T), and (eta) d (T) respectively on temperature T have been given and explained.

Paper Details

Date Published: 24 September 1996
PDF: 4 pages
Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); doi: 10.1117/12.251910
Show Author Affiliations
Lijun Wang, Changchun Institute of Physics (China)
Sheng Li Wu, Changchun Institute of Physics (China)
Jacqueline E. Diaz, Northwestern Univ. (United States)
Ivan Eliashevich, Northwestern Univ. (United States)
Hyuk Jong Yi, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 2886:
Semiconductor Lasers II
Siamak Forouhar; Qiming Wang, Editor(s)

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