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Proceedings Paper

LPE growth of high-power InGaAsP/GaAs SCH SQW lasers
Author(s): Baoxue Bo; Baoshun Zhang; Baoren Zhu; Zonghe Yang; Dacui Ren; Xingde Zhang
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Paper Abstract

A modified liquid phase epitaxy method was used to grow InGaAsP/GaAs SCH SQW multilayer structures for the diode lasers emitting at 0.81 micrometers . In order to prevent the phosphorus evaporation from source melts, the epitaxy process was carried out at the temperature as low as 750 degrees C. The lowest threshold current density Ith was 300A/cm2, the very high value of the total differential quantum efficiency obtained from long-cavity diodes exceeded 80 percent, the highest CW optical power obtained without any coatings was 2.1W.

Paper Details

Date Published: 24 September 1996
PDF: 2 pages
Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); doi: 10.1117/12.251908
Show Author Affiliations
Baoxue Bo, Changchun Institute of Optics and Fine Mechanics (China)
Baoshun Zhang, Changchun Institute of Optics and Fine Mechanics (China)
Baoren Zhu, Changchun Institute of Optics and Fine Mechanics (China)
Zonghe Yang, Changchun Institute of Optics and Fine Mechanics (China)
Dacui Ren, Changchun Institute of Optics and Fine Mechanics (China)
Xingde Zhang, Changchun Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 2886:
Semiconductor Lasers II
Siamak Forouhar; Qiming Wang, Editor(s)

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