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Proceedings Paper

Experimental investigation of the doping profile and structure of InGaAsP/InP multiple quantum wells after rapid thermal annealing
Author(s): Xuejin Yan; Rong Han Wu; Qiming Wang
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Paper Abstract

The influence of rapid thermal annealing (RTA) on the doping profile and the structure of quantum well LD have been investigated by means of Hall measurement, Auger Electron Spectroscopy, and Secondary Ion Mass Spectroscopy methods after certain RTA. It has been discovered that high resistivity layer was formed at the ohmic contact layer after RTA. However, the structure of quantum well LD is not influenced by RTA.

Paper Details

Date Published: 24 September 1996
PDF: 4 pages
Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); doi: 10.1117/12.251903
Show Author Affiliations
Xuejin Yan, Institute of Semiconductors (China)
Rong Han Wu, Institute of Semiconductors (China)
Qiming Wang, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 2886:
Semiconductor Lasers II
Siamak Forouhar; Qiming Wang, Editor(s)

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