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Proceedings Paper

Low-threshold-current InGaAs vertical cavity surface emitting laser with reverse mesa structure
Author(s): Zhongqi Pan; Yongzhen Huang; Rong Han Wu; Zengqi Zhou; Yaowang Ling; Qiming Wang
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Paper Abstract

Based on the equivalent resistance and finite element method, the current distribution in active region is analyzed with current injection from ring electrode. To improve the injection efficiency and reduce the resistance of p-type DBR, we design reverse mesa structure and achieved low threshold current InGaAs vertical cavity surface emitting laser operation. In situ thickness monitoring and controlling in MBE growth is also studied.

Paper Details

Date Published: 24 September 1996
PDF: 4 pages
Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); doi: 10.1117/12.251902
Show Author Affiliations
Zhongqi Pan, Institute of Semiconductors (China)
Yongzhen Huang, Institute of Semiconductors (China)
Rong Han Wu, Institute of Semiconductors (China)
Zengqi Zhou, Institute of Semiconductors (China)
Yaowang Ling, Institute of Semiconductors (China)
Qiming Wang, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 2886:
Semiconductor Lasers II
Siamak Forouhar; Qiming Wang, Editor(s)

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