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Proceedings Paper

High-power GRIN-SCH lasers with low-threshold-current density and high efficiency
Author(s): Donghai Zhu; Zhanguo Wang; Jiben Liang; Bo Xu; Zhanping Zhu; Jun Zhang; Qian Gong; Shengying Li; Zujie Fang; Yuzhen Tu; Bin Liu; Xiongwei Hu; Qin Han; Caizheng Jin
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Paper Abstract

In this letter, we report the MBE growth of GRIN-SCH ALGaAs single quantum well lasers. In order to obtain high quality laser materials, superlattice among GaAs buffer and n-AlGaAs cladding layer was incorporated. Reduced Be dopant concentration in the p-AlGaAs cladding layer near the GRIN region was adopted, which is believed to be benefit to the control of p-n junction places and reduction of the oxygen incorporation. High power broad-area lasers were fabricated. The typical threshold current density is 300A/cm2 and the minimum threshold current density is 220A/cm2 for the 500 micrometers cavity length lasers. High slope efficiency of 1.3W/A for 1000 micrometers cavity length lasers was obtained, recorded CW output power at room temperature has reached 2.3W. The measured characteristics temperature T(subscript 0$. is as high as 185K.

Paper Details

Date Published: 24 September 1996
PDF: 4 pages
Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); doi: 10.1117/12.251899
Show Author Affiliations
Donghai Zhu, Institute of Semiconductors (China)
Zhanguo Wang, Institute of Semiconductors (China)
Jiben Liang, Institute of Semiconductors (China)
Bo Xu, Institute of Semiconductors (China)
Zhanping Zhu, Institute of Semiconductors (China)
Jun Zhang, Institute of Semiconductors (China)
Qian Gong, Institute of Semiconductors (China)
Shengying Li, Institute of Semiconductors (China)
Zujie Fang, Shanghai Institute of Optics and Fine Mechanics (China)
Yuzhen Tu, Shanghai Institute of Optics and Fine Mechanics (China)
Bin Liu, Shanghai Institute of Optics and Fine Mechanics (China)
Xiongwei Hu, National Research Ctr. for Optoelectronic Technology (China)
Qin Han, Institute of Semiconductors (China)
Caizheng Jin, National Research Ctr. for Optoelectronic Technology (China)


Published in SPIE Proceedings Vol. 2886:
Semiconductor Lasers II
Siamak Forouhar; Qiming Wang, Editor(s)

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