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Proceedings Paper

VCSEL array fabricated by selective etching and selective oxidation
Author(s): ShiMing Lin; Xuejun Kang; Qiming Wang; Junhua Gao; Honghai Gao; Hongjie Wang; Lixuan Wang; Chunhui Zhang
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Paper Abstract

The effects of the thickness of the oxidized layer, reaction temperature and carrier gas flow on the oxidation rate of AlxGa1-xAs-AlAs-GaAs heterostructures are presented. The electrically-pumped GaAs/AlGaAs vertical cavity surface emitting laser 2D arrays fabricated by selective etching and selective oxidation are described. The square current flow aperture of 4 X 4 micrometers 2 are formed by the buried oxidized AlAs layers formed on both top and bottom distributed Bragg reflectors adjacent active region. The serious resistance of the devices are 60 to 80 (Omega) . The continuous-wave threshold current as low as 3.8mA is obtained at room temperature. The devices show the maximum output power over 1mW. Their angles of divergence are less than 7.8 degrees and the pulse rise times are less than 100ps in the high speed pulse response measurements. The 2 X 3 2D arrays are obtained. The thresholds of devices in the array are within 6 +/- 0.5 mA.

Paper Details

Date Published: 24 September 1996
PDF: 5 pages
Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); doi: 10.1117/12.251895
Show Author Affiliations
ShiMing Lin, Institute of Semiconductors (China)
Xuejun Kang, Xian Jiaotong Univ. (China)
Qiming Wang, Institute of Semiconductors (China)
Junhua Gao, Institute of Semiconductors (China)
Honghai Gao, Institute of Semiconductors (China)
Hongjie Wang, Institute of Semiconductors (China)
Lixuan Wang, Institute of Semiconductors (China)
Chunhui Zhang, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 2886:
Semiconductor Lasers II
Siamak Forouhar; Qiming Wang, Editor(s)

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