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Proceedings Paper

Visible photo- and electro-luminescence from laser-crystallized a-Si:H and its based multilayers
Author(s): Kun-Ji Chen; Wei Wu; Xinfan Huang; Zhifeng Li; Mingxiang Wang; Jun Xu; Wei Li; Duan Feng
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Paper Abstract

We have reported for the first time on visible photoluminescence (PL) in crystallized a-Si:H/aSiNx:H multilayers structure by CW Ar ion laser annealing treatments. In this paper we present new results on visible PL and electroluminescence (EL) from crystallized a:SiH and its based multilayers by using KrF excimer pulse laser irradiating treatments. Strong and stable PL and EL have been observed by naked eye in both laser irradiated a-Si:H and a-Si:H/aSiNx:H multilayers samples at room temperature. The EL peak of crystallized a-Si:H/a-SiNx:H multilayers is blue shifted from 1.79 eV to 2.00 eV with narrowing the well layer thickness from 4 nm to 2 nm which suggests the origin of the light emission should be related to the quantum size effect.

Paper Details

Date Published: 24 September 1996
PDF: 8 pages
Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); doi: 10.1117/12.251893
Show Author Affiliations
Kun-Ji Chen, Nanjing Univ. and Ctr. for Advanced Studies in Science and Technology of Microstructures (China)
Wei Wu, Nanjing Univ. and Ctr. for Advanced Studies in Science and Technology of Microstructures (China)
Xinfan Huang, Nanjing Univ. and Ctr. for Advanced Studies in Science and Technology of Microstructures (China)
Zhifeng Li, Nanjing Univ. and Ctr. for Advanced Studies in Science and Technology of Microstructures (China)
Mingxiang Wang, Nanjing Univ. and Ctr. for Advanced Studies in Science and Technology of Microstructures (China)
Jun Xu, Nanjing Univ. and Ctr. for Advanced Studies in Science and Technology of Microstructures (China)
Wei Li, Nanjing Univ. and Ctr. for Advanced Studies in Science and Technology of Microstructures (China)
Duan Feng, Nanjing Univ. and Ctr. for Advanced Studies in Science and Technology of Microstructures (China)


Published in SPIE Proceedings Vol. 2886:
Semiconductor Lasers II
Siamak Forouhar; Qiming Wang, Editor(s)

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