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Proceedings Paper

Far-field control of vertical cavity surface emitting lasers
Author(s): Yi-Guang Zhao; Y.-S. Zhang; X.-L. Huang; W.-X. Chen; L.-F. Cong; C.-Z. Jin; S.-M. Lin; X.-W. Hu; Wei Wang
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Paper Abstract

The far-field control of vertical-cavity surface-emitting lasers (VCSELs) has been studied experimentally and theoretically. The experimental results show that the window and the gain-guided area radiuses of VCSELs strongly influence laser far-field distributions and beam characteristics; for VCSELs with small window radius w equals 2.5 micrometers , only one dominant lobe has been observed in the far-field profiles, even though injected current was increased up to 2 Ith; and the smaller the ratio of the window radius to the gain-guided area radius, the larger is the far-field divergence. To understand the experimental results, we have also performed a calculation using a method of finding self-consistent solutions for the carrier diffusion and the optical field equations. The calculated results are in good agreement with those of the experiments.

Paper Details

Date Published: 24 September 1996
PDF: 8 pages
Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); doi: 10.1117/12.251889
Show Author Affiliations
Yi-Guang Zhao, Peking Univ. (China)
Y.-S. Zhang, Peking Univ. (China)
X.-L. Huang, Peking Univ. (China)
W.-X. Chen, Peking Univ. (China)
L.-F. Cong, Institute of Semiconductors (China)
C.-Z. Jin, Institute of Semiconductors (China)
S.-M. Lin, Institute of Semiconductors (China)
X.-W. Hu, Institute of Semiconductors (China)
Wei Wang, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 2886:
Semiconductor Lasers II
Siamak Forouhar; Qiming Wang, Editor(s)

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