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Ga vacancies and electrical compensation in β-Ga2O3 thin films studied with positron annihilation spectroscopy
Author(s): Filip Tuomisto; Antti Karjalainen; Vera Prozheeva; Ilja Makkonen; Gunter Wagner; Michele Baldini
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Paper Abstract

We have applied positron annihilation spectroscopy to study vacancy-type defects in unintentionally doped and Si and Sn doped β-Ga2O3 homoepitaxial thin films grown by metal-organic chemical vapor deposition (MOCVD). We detect Ga vacancy related defects at high concentrations in semi-insulating and highly resistive material, while conductive (ntype) material exhibits very low Ga vacancy concentrations. These findings show that Ga vacancies can act as efficient electrical compensators for n-type conductivity, but their concentrations can be suppressed by controlling the growth environment, leading to efficient n-type doping. We also note the strong anisotropy of the positron annihilation signals and give recommendation for presenting positron data obtained in β-Ga2O3.

Paper Details

Date Published: 1 March 2019
PDF: 8 pages
Proc. SPIE 10919, Oxide-based Materials and Devices X, 1091910 (1 March 2019); doi: 10.1117/12.2518888
Show Author Affiliations
Filip Tuomisto, Aalto Univ. (Finland)
Antti Karjalainen, Aalto Univ. (Finland)
Vera Prozheeva, Aalto Univ. (Finland)
Ilja Makkonen, Aalto Univ. (Finland)
Gunter Wagner, Leibniz Institute for Crystal Growth (Germany)
Michele Baldini, Leibniz Institute for Crystal Growth (Germany)


Published in SPIE Proceedings Vol. 10919:
Oxide-based Materials and Devices X
David J. Rogers; David C. Look; Ferechteh H. Teherani, Editor(s)

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