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Proceedings Paper

Semiconductor lasers in China
Author(s): Lianhui Chen
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Paper Abstract

This paper reviews the development of semiconductor lasers, especially the breakthrough on quantum well lasers in China. Regarding on the super thin material growth, the developing history of Molecular beam epitaxy and metalorganic chemical vapor deposition are briefly introduced. Taking some kinds of lasers as examples, the characteristics of long wavelength MQW F-P LD and MQW DFB LD, 808nm high power lasers and visible lasers are also demonstrated. The low dimension lasers including quantum wire and quantum dot are under way.

Paper Details

Date Published: 24 September 1996
PDF: 3 pages
Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); doi: 10.1117/12.251888
Show Author Affiliations
Lianhui Chen, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 2886:
Semiconductor Lasers II
Siamak Forouhar; Qiming Wang, Editor(s)

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