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Proceedings Paper

Intersubband lasing in silicon-based multiple quantum wells
Author(s): Gregory Sun; Jacob B. Khurgin; Lionel R. Friedman; Richard A. Soref
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Paper Abstract

Because of the absence of polar optical scattering, the lifetime difference of the upper and lower lasing levels, to which population inversion and laser gain are proportional, is an order of magnitude larger in silicon-based structures than in the III-Vs. Further enhancements are due to phonon confinement. For lasing wavelengths 10 micrometers and longer, GexSi1-x/Si is used. For operation at near infrared wavelengths, high barrier materials are needed. To avoid large operating voltages, designs are considered which rely on parallel rather than sequential operation.

Paper Details

Date Published: 24 September 1996
PDF: 7 pages
Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); doi: 10.1117/12.251876
Show Author Affiliations
Gregory Sun, Univ. of Massachusetts (United States)
Jacob B. Khurgin, Johns Hopkins Univ. (United States)
Lionel R. Friedman, Rome Lab. (United States)
Richard A. Soref, Rome Lab. (United States)

Published in SPIE Proceedings Vol. 2886:
Semiconductor Lasers II
Siamak Forouhar; Qiming Wang, Editor(s)

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