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Proceedings Paper

Optically pumped intersubband electron Raman lasers
Author(s): Gregory Sun; Jacob B. Khurgin; Lionel R. Friedman; Richard A. Soref
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Paper Abstract

A new tunable source of infrared radiation based on intersubband electron Raman scattering in semiconductor quantum wells is theoretically studied. The structure consisting of three levels in two coupled GaAs/AlGaAs quantum wells is optimized for a maximum Raman gain at zero bias. Raman gain as large as 400/cm can be achieved according to our calculations. Lasing wavelengths are tuned by applying external dc bias field along the growth direction. An infrared tuning range of 8 to 12 micrometers , with moderate Raman gain, is predicted as the electric field is varied from -40 to 40 kV/cm.

Paper Details

Date Published: 24 September 1996
PDF: 5 pages
Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); doi: 10.1117/12.251875
Show Author Affiliations
Gregory Sun, Univ. of Massachusetts (United States)
Jacob B. Khurgin, Johns Hopkins Univ. (United States)
Lionel R. Friedman, Rome Lab. (United States)
Richard A. Soref, Rome Lab. (United States)

Published in SPIE Proceedings Vol. 2886:
Semiconductor Lasers II
Siamak Forouhar; Qiming Wang, Editor(s)

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