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Virtual fabrication and advanced process control improve yield for SAQP process assessment with 16 nm half-pitch
Author(s): Benjamin Vincent; S. Lariviere; C. Wilson; R. H. Kim; J. Ervin
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Paper Abstract

This paper uses Virtual Fabrication to assess the imec 7 nm node (iN7) Self-Aligned Quadruple Patterning (SAQP) integration scheme for the 16 nm half-pitch Metal 2 line formation. We present first the technical challenge of obtaining defect-free M2 lines with SAQP, and then provide a solution to achieve a <1% failure rate using a combination of Advanced Process Control and Virtual Fabrication.

Paper Details

Date Published: 20 March 2019
PDF: 9 pages
Proc. SPIE 10963, Advanced Etch Technology for Nanopatterning VIII, 109630Q (20 March 2019); doi: 10.1117/12.2518099
Show Author Affiliations
Benjamin Vincent, Coventor, SARL (France)
S. Lariviere, IMEC (Belgium)
C. Wilson, IMEC (Belgium)
R. H. Kim, IMEC (Belgium)
J. Ervin, Coventor, SARL (France)

Published in SPIE Proceedings Vol. 10963:
Advanced Etch Technology for Nanopatterning VIII
Richard S. Wise; Catherine B. Labelle, Editor(s)

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