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Laser system for measuring MEMS relief created by the method of deep reactive ion etching
Author(s): Tadeáš Maňka; Mojmír Šerý; Stanislav Krátký; Pavel Zemánek
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Paper Abstract

The method of laser interferometry is presented appropriate for precise determination of the depth of etching in a deep reactive ion etching system (DRIE), primarily used for the manufacturing of micro-electro-mechanical systems (MEMS). The system uses previous interferometer designs developed at the Institute of Institute of Scientific Instruments of the CAS, v. v. i. (ISI). We designed and manufactured a measurement system for specific MEMS and its functionality verified with the KLATencor D-120 profilometer.

Paper Details

Date Published: 18 December 2018
PDF: 7 pages
Proc. SPIE 10976, 21st Czech-Polish-Slovak Optical Conference on Wave and Quantum Aspects of Contemporary Optics, 109760M (18 December 2018); doi: 10.1117/12.2518098
Show Author Affiliations
Tadeáš Maňka, Institute of Scientific Instruments of the CAS, v.v.i. (Czech Republic)
Mojmír Šerý, Institute of Scientific Instruments of the CAS, v.v.i. (Czech Republic)
Stanislav Krátký, Institute of Scientific Instruments of the CAS, v.v.i. (Czech Republic)
Pavel Zemánek, Institute of Scientific Instruments of the CAS, v.v.i. (Czech Republic)


Published in SPIE Proceedings Vol. 10976:
21st Czech-Polish-Slovak Optical Conference on Wave and Quantum Aspects of Contemporary Optics
Pavel Zemánek, Editor(s)

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