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Bright octave-span mid-IR supercontinuum generation in silicon germanium waveguide
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Paper Abstract

We present silicon-germanium on silicon waveguides as a suitable platform for on-chip supercontinuum generation in the mid-infrared. We report low propagation loss (<0.4dB∕cm) in the 3.5-5 μm range, leading to an octave spanning supercontinuum extending up to 8.5 μm with a high average power of more than 10 mW on-chip. Furthermore, we present the addition of a chalcogenide cladding layer as a simple post-processing technique to fine tune the waveguide dispersion which, in turn, governs the properties of the generated supercontinuum.

Paper Details

Date Published: 4 March 2019
PDF: 7 pages
Proc. SPIE 10921, Integrated Optics: Devices, Materials, and Technologies XXIII, 109210A (4 March 2019); doi: 10.1117/12.2517866
Show Author Affiliations
Alberto Della Torre , Institut des Nanotechnologies de Lyon, Univ. de Lyon, CNRS (France)
Milan Sinobad, Institut des Nanotechnologies de Lyon, Univ. de Lyon, CNRS (France)
RMIT Univ. (Australia)
Barry Luther-Davies, The Australian National Univ. (Australia)
Pan Ma, The Australian National Univ. (Australia)
Stephen Madden, The Australian National Univ. (Australia)
Sukanta Debbarma, The Australian National Univ. (Australia)
Khu Vu, The Australian National Univ. (Australia)
David J. Moss, Swinburne Univ. of Technology (Australia)
Arnan Mitchell, RMIT Univ. (Australia)
Jean-Michel Hartmann, Univ. Grenoble Alpes, CEA-LETI (France)
Jean-Marc Fedeli, Univ. Grenoble Alpes, CEA-LETI (France)
Christelle Monat, Institut des Nanotechnologies de Lyon, Univ. de Lyon, CNRS (France)
Christian Grillet, Institut des Nanotechnologies de Lyon, Univ. de Lyon, CNRS (France)


Published in SPIE Proceedings Vol. 10921:
Integrated Optics: Devices, Materials, and Technologies XXIII
Sonia M. García-Blanco; Pavel Cheben, Editor(s)

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