Share Email Print
cover

Proceedings Paper • new

Litho-performance expansion with new SOC made from Hemicellulose
Author(s): Masahiko Harumoto; Yuji Tanaka; Chisayo Nakayama; You Arisawa; Masaya Asai; Charles Pieczulewski; Harold Stokes; Kimiko Yamamoto; Hiroki Tanaka; Yasuaki Tanaka; Kazuyo Morita
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Tri-layer processes, which typically consist of photoresist, Si containing anti-reflective coating (Si-ARC) and spin on carbon (SOC), have been widely used since ArF immersion lithography. Continually reduced pattern dimensions need thinner photoresist films due to the common phenomenon of post-develop line collapse with higher aspect ratios. Consequently, it has been necessary to enhance pattern transfer performance after etching with such tri-layer processes. Successfully implementing tri-layer processes requires consideration of issues such as increased process steps, cost, and other inherent limitations of pattern transfer enhancement with a more complicated stack. In this work, we present a hemicellulose SOC material with the outstanding advantage of Si etch selectivity greater than 15. Hemicellulose SOC could significantly reduce pattern transfer limitations for etching, therefore the benefits of processing higher aspect ratio structures can be more easily achieved. Herein, we investigate the hemicellulose SOC lithography performance using resolution, sensitivity, and line width roughness as metrics. Also, we demonstrate these lithography performances through the etching. During the conference, we will discuss the potential issues of next generation processes using ArF immersion and EUV lithography.

Paper Details

Date Published: 4 June 2019
PDF: 5 pages
Proc. SPIE 10957, Extreme Ultraviolet (EUV) Lithography X, 109571V (4 June 2019); doi: 10.1117/12.2517692
Show Author Affiliations
Masahiko Harumoto, SCREEN Semiconductor Solutions Co. Ltd. (Japan)
Yuji Tanaka, SCREEN Semiconductor Solutions Co. Ltd. (Japan)
Chisayo Nakayama, SCREEN Semiconductor Solutions Co. Ltd. (Japan)
You Arisawa, SCREEN Semiconductor Solutions Co. Ltd. (Japan)
Masaya Asai, SCREEN Semiconductor Solutions Co. Ltd. (Japan)
Charles Pieczulewski, SCREEN Semiconductor Solutions Co. Ltd. (Japan)
Harold Stokes, SCREEN SPE Germany GmbH (Germany)
Kimiko Yamamoto, Oji Holdings Corp. (Japan)
Hiroki Tanaka, Oji Holdings Corp. (Japan)
Yasuaki Tanaka, Oji Holdings Corp. (Japan)
Kazuyo Morita, Oji Holdings Corp. (Japan)


Published in SPIE Proceedings Vol. 10957:
Extreme Ultraviolet (EUV) Lithography X
Kenneth A. Goldberg, Editor(s)

© SPIE. Terms of Use
Back to Top