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A 3C-SiC-on-oxide (SiCOI) platform enabling high-Q resonators over an octave frequency range from visible to near-infrared (Conference Presentation)

Paper Abstract

3C-SiC is a large bandgap material with a wide range of applications both in electronics and photonics. Here we demonstrate a low-loss 3C-SiC-on-Oxide (SiCOI) platform over an octave frequency range from visible to near-infrared. A 3C-SiC film is transferred onto an oxide-on-silicon substrate through wafer bonding to form a reliable SiCOI platform suitable for device integration, and the defect-rich transition layer in SiC is removed by chemical mechanical polishing (CMP). With low density of defects and a small root-mean-square (RMS) surface roughness (Rq) of about 1.4 Å in our SiC thin film, we are able to demonstrate record-high intrinsic quality factors of ~250,000 at 1550 nm wavelength and ~85,000 at 770 nm wavelength. Our low-loss SiCOI platform is promising for wideband nonlinear optical applications including second harmonic generation (SHG), four wave mixing (FWM), and Kerr frequency comb.

Paper Details

Date Published: 8 March 2019
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Proc. SPIE 10927, Photonic and Phononic Properties of Engineered Nanostructures IX, 109270S (8 March 2019); doi: 10.1117/12.2517638
Show Author Affiliations
Tianren Fan, Georgia Institute of Technology (United States)
Hesam Moradinejad, Georgia Institute of Technology (United States)
Xi Wu, Georgia Institute of Technology (United States)
Ali A. Eftekhar, Georgia Institute of Technology (United States)
Ali Adibi, Georgia Institute of Technology (United States)


Published in SPIE Proceedings Vol. 10927:
Photonic and Phononic Properties of Engineered Nanostructures IX
Ali Adibi; Shawn-Yu Lin; Axel Scherer, Editor(s)

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