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EUV insertion strategy into logic technology on the horizon of scaling paradigm change
Author(s): Ryoung-Han R. Kim
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Paper Abstract

Under the growing concern on the cost and complexity of pitch-only scaling, scaling paradigm in logic technology is changing with adoption of design technology co-optimization (DTCO) and system technology co-optimization (STCO). On this landscape of rapid technology evolution, Extreme Ultraviolet Lithography (EUVL) faces its insertion into high volume manufacturing (HVM) from 2019 with shift on focus from infrastructural readiness to high volume manufacturability. In this presentation, EUV insertion strategy into the logic technology nodes will be discussed on the horizon of current and up-coming industry technology nodes. With remaining technical challenges in EUV across mask, patterning, computational lithography and design, it will be discussed how EUV can be coupled with other technological considerations to enable smooth adoption.

Paper Details

Date Published: 14 March 2019
PDF
Proc. SPIE 10957, Extreme Ultraviolet (EUV) Lithography X, 1095706 (14 March 2019); doi: 10.1117/12.2516524
Show Author Affiliations
Ryoung-Han R. Kim, IMEC (Belgium)


Published in SPIE Proceedings Vol. 10957:
Extreme Ultraviolet (EUV) Lithography X
Kenneth A. Goldberg, Editor(s)

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