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Graphene-based 2D-heterostructures for terahertz lasers and amplifiers
Author(s): D. Yadav; S. Boubanga-Tombet; A. Satou; T. Tamamushi; T. Watanabe; T. Suemitsu; H. Fukidome; M. Suemitsu; A. A. Dubinov; V. V. Popov; M. Ryzhii; V. Mitin; M. S. Shur; V. Ryzhii; T. Otsuji
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Paper Abstract

This paper reviews recent advances in the terahertz (THz) graphene-based 2D-heterostructure lasers and amplifiers. The linear gapless graphene energy spectrum enables population inversion under optical and electrical pumping giving rise to the negative dynamic conductivity in a wide THz frequency range. We first theoretically discovered these phenomena and recently reported on the experimental observation of the amplified spontaneous THz emission and single-mode THz lasing at 100K in the current-injection pumped graphene-channel field-effect transistors (GFETs) with a distributedfeedback dual-gate structure. We also observed the light amplification of stimulated emission of THz radiation driven by graphene-plasmon instability in the asymmetric dual-grating gate (ADGG) GFETs by using a THz time-domain spectroscopy technique. Integrating the graphene surface plasmon polariton (SPP) oscillator into a current-injection graphene THz laser transistor is the most promising approach towards room-temperature intense THz lasing.

Paper Details

Date Published: 1 March 2019
PDF: 10 pages
Proc. SPIE 10917, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XII, 109170G (1 March 2019); doi: 10.1117/12.2516494
Show Author Affiliations
D. Yadav, Tohoku Univ. (Japan)
S. Boubanga-Tombet, Tohoku Univ. (Japan)
A. Satou, Tohoku Univ. (Japan)
T. Tamamushi, Tohoku Univ. (Japan)
T. Watanabe, Tohoku Univ. (Japan)
T. Suemitsu, Tohoku Univ. (Japan)
H. Fukidome, Tohoku Univ. (Japan)
M. Suemitsu, Tohoku Univ. (Japan)
A. A. Dubinov, Institute for Physics of Microstructures (Russian Federation)
V. V. Popov, Kotelnikov Institute of Radio Engineering and Electronics (Russian Federation)
M. Ryzhii, Univ. of Aizu (Japan)
V. Mitin, Univ. at Buffalo (United States)
M. S. Shur, Rensselaer Polytechnic Institute (United States)
V. Ryzhii, Tohoku Univ. (Japan)
T. Otsuji, Tohoku Univ. (Japan)


Published in SPIE Proceedings Vol. 10917:
Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XII
Laurence P. Sadwick; Tianxin Yang, Editor(s)

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