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Emitted beam stabilization in junction plane by lateral periodic structure in laser diodes emitting at 980 nm
Author(s): Andrzej Maląg; Grzegorz Sobczak; Elżbieta Dąbrowska; Marian Teodorczyk
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Paper Abstract

In this paper the possibility of improvement of emitted beam quality of high-power laser diodes by stabilization of an optical field distribution in the junction plane, forced by lateral periodicity built into their wide-stripe waveguide is described. Current flow control by such periodic structure prevents the lateral current crowding, carrier accumulation at the stripe edges and optical far-field blooming typical for conventional wide-stripe laser diodes. As a result, stabilization of the lateral emitted beam divergence in wide drive current range of CW operation has been evidenced.

Paper Details

Date Published: 4 December 2018
PDF: 8 pages
Proc. SPIE 10974, Laser Technology 2018: Progress and Applications of Lasers, 1097404 (4 December 2018); doi: 10.1117/12.2516448
Show Author Affiliations
Andrzej Maląg, Institute of Electronic Materials Technology (Poland)
Grzegorz Sobczak, Institute of Electron Technology (Poland)
Elżbieta Dąbrowska, Institute of Electronic Materials Technology (Poland)
Marian Teodorczyk, Institute of Electronic Materials Technology (Poland)


Published in SPIE Proceedings Vol. 10974:
Laser Technology 2018: Progress and Applications of Lasers
Jan K. Jabczynski; Ryszard S. Romaniuk, Editor(s)

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