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Photoluminescence and photoconductivity to assess maximum open-circuit voltage and carrier transport in hybrid perovskites and other photovoltaic materials (Conference Presentation)
Author(s): Hugh W. Hillhouse
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Paper Abstract

Photovoltaic (PV) device development is much more expensive and time consuming than the development of the absorber layer alone. The presentation focuses on two methods that can be used to rapidly assess and develop PV absorber materials independent of device development. The absorber material properties of quasi-Fermi level splitting and carrier diffusion length under steady effective one-Sun illumination are indicators of a material’s ability to achieve high open circuit voltage and short circuit current. These two material properties can be rapidly and simultaneously assessed with steady-state absolute intensity photoluminescence and photoconductivity measurements when combined with theory. As a result, these methods are extremely useful for predicting the quality and stability of PV materials prior to PV device development. The presentation will summarize the methods, discuss their strengths and weaknesses, and compare photoluminescence and photoconductivity results with device performance for a wide range of hybrid perovskite compositions of various bandgaps along with conventional PV materials CuInSe2, CuInGaSe2, and CuZnSnSe4.

Paper Details

Date Published: 8 March 2019
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Proc. SPIE 10913, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII, 109130W (8 March 2019); doi: 10.1117/12.2515635
Show Author Affiliations
Hugh W. Hillhouse, Univ. of Washington (United States)


Published in SPIE Proceedings Vol. 10913:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII
Alexandre Freundlich; Laurent Lombez; Masakazu Sugiyama, Editor(s)

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