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Study of InGaAs/InAlAs avalanche photodiodes grown on InP
Author(s): Da-nong Zheng; Ying-Qiang Xu; Hai-Qiao Ni; Zhichuan Niu
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Paper Abstract

In this paper, we are report an avalanche photodiodes (APD) with an InGaAs absorption region and an InAlAs avalanche region. Devices are designed with separate absorption, grading, charge, and multiplication (SAGCM) layers on InP substrates, which are demonstrated to detect 1550 nm wavelength light. The epilayers of the APD devices are grown by a Veeco Gen 930 MBE system. The quality of epilayers is good which shown in the surface morphology characterized by AFM. The root mean square (RMS) of surface morphology is only 1.4Å.Operating at room temperature and in the linear mode, the APD achieved a dark-current level of 2.7uA/mm2,and a maximum gain of M>300 is demonstrated.

Paper Details

Date Published: 19 November 2018
PDF: 7 pages
Proc. SPIE 10826, Infrared, Millimeter-Wave, and Terahertz Technologies V, 1082621 (19 November 2018); doi: 10.1117/12.2515586
Show Author Affiliations
Da-nong Zheng, Institute of Semiconductors CAS (China)
Ying-Qiang Xu, Institute of Semiconductors, Chinese Academy of Sciences (China)
Hai-Qiao Ni, Institute of Semiconductors, Chinese Academy of Sciences (China)
Zhichuan Niu, Institute of Semiconductors, Chinese Academy of Sciences (China)


Published in SPIE Proceedings Vol. 10826:
Infrared, Millimeter-Wave, and Terahertz Technologies V
Cunlin Zhang; Xi-Cheng Zhang; Masahiko Tani, Editor(s)

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