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Quantum-dot devices for high-performance telecom applications (Conference Presentation)
Author(s): Johann Peter Reithmaier
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Paper Abstract

All major performance data of optoelectronic devices usually show a strong temperature dependence due to carrier redistribution from ground to excited states. This is even more severe in smaller bandgap materials such as InP based compounds addressing telecom emission wavelengths of 1.55 µm. As a consequence, not only static properties are deteriorated, also high-speed properties deteriorate at high operation temperatures. In particular, in integrated optoelectronic devices with different functionalities and a high heat load, it is mandatory to use optoelectronic components with much reduced temperature sensitivity compared to conventional semiconductor devices. Atomic-like gain material, such as quantum dot (QD) material, offers strong improvements due to delta-like density of states functions. In the ideal case of a sufficiently large energy splitting between ground and exited states, the carrier distribution stays constant, independent of the operation temperature. This results in constant laser performance, i.e., temperature independent threshold conditions, differential efficiency and modulation properties. However, not only the temperature stability gains from an atomic-like gain profile. Also the emission linewidth in semiconductor lasers can be minimized by avoiding the redistribution of carriers into higher order states. With a symmetric gain function, as obtained in QD materials, the linewidth enhancement factor can be kept well below 1, which suppresses the linewidth broadening effects observed in quantum well gain material. This talk gives an overview of the most recent progress in the development of InP-based QD gain material for directly modulated laser diodes, semiconductor optical amplifiers as well as for ultra-narrow linewidth distributed feedback lasers.

Paper Details

Date Published: 8 March 2019
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Proc. SPIE 10912, Physics and Simulation of Optoelectronic Devices XXVII, 1091207 (8 March 2019); doi: 10.1117/12.2515448
Show Author Affiliations
Johann Peter Reithmaier, Univ. Kassel (Germany)


Published in SPIE Proceedings Vol. 10912:
Physics and Simulation of Optoelectronic Devices XXVII
Bernd Witzigmann; Marek Osiński; Yasuhiko Arakawa, Editor(s)

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