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Enhanced performance of InGaN thin-film solar cells containining plasmonic and dielectric nanostructures
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Paper Abstract

We present Indium-rich InGaN thin-film solar cells containing plasmonic and dielectric nanostructures such as Ag and ITO nanopillars. Finite-difference time-domain (FDTD) simulations were carried out for solar cells containing these nanostructures on the back side and on the front side of the solar cells, and an improvement in the performance of the solar cells was compared for the different geometries and sizes of these nanostructures. In order to develop highefficiency InGaN solar cells, the indium content in the InGaN active layer needs to be increased in order to cover the large solar spectral range. Recently, several reports have demonstrated the growth of single-crystalline Indium-rich InGaN alloys without phase separation by controlling the growth temperature and the pressure. Our FDTD simulation results demonstrate that the Ag nanostructures on the back side of the solar cell lead to an enhanced surface plasmonbased scattering mostly for longer wavelengths of light including band edge of active material, while the ITO nanostructures on the front side lead to enhanced scattering of a middle wavelength range from 450 nm to 700 nm. Hence, a combination of Ag and ITO nanostructures leads to a significant broadband absorption enhancement in the active-medium of the solar cells which in turn leads to a significant enhancement (~ 25 %) in the short circuit current density (Jsc) of these solar cells.

Paper Details

Date Published: 27 February 2019
PDF: 8 pages
Proc. SPIE 10913, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII, 109131P (27 February 2019); doi: 10.1117/12.2515405
Show Author Affiliations
Uttam K. Kumawat, Indian Institute of Technology Delhi (India)
Kamal Kumar, Indian Institute of Technology Delhi (India)
Pankaj Das , Indian Institute of Technology Delhi (India)
Kaleem Ahmed, Indian Institute of Technology Delhi (India)
Priyanka Bhardwaj, Indian Institute of Technology Delhi (India)
Anuj Dhawan, Indian Institute of Technology Delhi (India)


Published in SPIE Proceedings Vol. 10913:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII
Alexandre Freundlich; Laurent Lombez; Masakazu Sugiyama, Editor(s)

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