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Ultrathin GaAs and CIGS solar cells (Conference Presentation)
Author(s): Stéphane Collin
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Paper Abstract

In photovoltaics, recent advances in light trapping open the way toward a decrease of the absorber thickness by more than one order of magnitude. It could enable significant material savings and cost reduction of silicon and thin-film solar cells, and may constitute a breakthrough for the development of hot-carrier solar cells. First, we review recent achievements of ultrathin GaAs and CIGS solar cells. Second, we describe 200nm-thick GaAs solar cells with a nanostructured back mirror and demonstrate a record 19.9% efficiency. Third, we present the development of ultrathin and low-cost CIGS solar cells with a back mirror.

Paper Details

Date Published: 8 March 2019
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Proc. SPIE 10913, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII, 109130J (8 March 2019); doi: 10.1117/12.2515295
Show Author Affiliations
Stéphane Collin, Ctr. de Nanosciences et de Nanotechnologies (France)


Published in SPIE Proceedings Vol. 10913:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII
Alexandre Freundlich; Laurent Lombez; Masakazu Sugiyama, Editor(s)

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