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Proceedings Paper • Open Access • new

Dynamical and anisotropic properties of spin-VCSELs

Paper Abstract

Spin-polarized lasers such as spin-polarized vertical-cavity surface-emitting laser (spin-VCSELs) are prospective devices in which the radiative recombination of spin-polarized carriers results in an emission of circularly-polarized photons. Nevertheless, additional linear in-plane anisotropies in the cavity generally lead in preferential linearlypolarized laser emission and to possible coupling between modes. Optimization of room-temperature spinVCSELs thus relies on a proper modeling method and on a good understanding of these anisotropies that may reveal (i) a local linear birefringence due to strain fields at the surface or (ii) a birefringence in quantum wells (QWs) due to phase-amplitude coupling originating from the reduction of the biaxial D2d to the C2v symmetry group at the III-V ternary semiconductor interfaces. We present a novel method for the modeling of steady-state and dynamical properties of generally anisotropic multilayer semiconductor lasers containing multiple QWs active region. In order to solve the dynamical properties of spin-VCSELs, we combine here optical Bloch equations for a 4-level system with the scattering-matrix formalism, which treats VCSELs as a multilayer structure containing classical active dipole layers [T. F¨ord¨os et al., Phys. Rev. A 96, 043828 (2017)]. The method is then demonstrated on real semiconductor laser structures with InGaAs/GaAsP quantum wells. It is used for calculation of the laser resonance condition, the polarization properties of eigenmodes, the electromagnetic-field distribution inside the laser cavity, and time-dependent properties of the emitted light.

Paper Details

Date Published: 1 February 2019
PDF: 15 pages
Proc. SPIE 10926, Quantum Sensing and Nano Electronics and Photonics XVI, 1092614 (1 February 2019); doi: 10.1117/12.2515288
Show Author Affiliations
M. Drong, VŠB-Technical Univ. of Ostrava (Czech Republic)
T. Fördös, VŠB-Technical Univ. of Ostrava (Czech Republic)
Ecole Polytechnique Fédérale de Lausanne (France)
Univ. Paris-Saclay (France)
H. Jaffrès, Unité Mixte de Physique CNRS/Thales (France)
Univ. Paris-Saclay (France)
K. Postava, VŠB-Technical Univ. of Ostrava (Czech Republic)
J. Peřina, Palacký Univ. (Czech Republic)
H.-J Drouhin, Ecole Polytechnique (France)
Unive. Paris-Saclay (France)
J. Pištora, VŠB-Technical Univ. of Ostrava (Czech Republic)


Published in SPIE Proceedings Vol. 10926:
Quantum Sensing and Nano Electronics and Photonics XVI
Manijeh Razeghi, Editor(s)

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