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FEM simulation for artificial generation of SEM pictures
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Paper Abstract

Nowadays, the accuracy of the metrology is becoming more and more a critical issue for microelectronic manufacturing as new technology nodes necessitate more and more rigorous process control. Scanning Electron Microscope (SEM) is the equipment most typically used to measure pattern dimensions. The aim of this study is to model and simulate a synthetic SEM image. This is fulfilled by taking into account the physical phenomena that take place in the sample during the scanning of the electron beam. The considered phenomena are the kinetics of the drift and the diffusion of the charges during the scanning and the secondary electrons emission from the sample into the vacuum. A system of Partial Differential Equations (PDEs) is obtained which defines a system that will be solved using the Finite Element Method. The escaping of the secondary electrons is modeled by applying a Robin boundary condition on the top surface of the sample. By computing the secondary electron emission that originates from the sample during the beam scan, a synthetic SEM image is created.

Paper Details

Date Published: 26 March 2019
PDF: 7 pages
Proc. SPIE 10959, Metrology, Inspection, and Process Control for Microlithography XXXIII, 1095918 (26 March 2019); doi: 10.1117/12.2515181
Show Author Affiliations
Duy Duc Nguyen, Univ. Grenoble Alpes, CNRS, CEA-LETI (France)
ASELTA Nanographics, Minatec-BHT (France)
Jean-Herve Tortai, Univ. Grenoble Alpes, CNRS, CEA-LETI (France)
Patrick Schiavone, ASELTA Nanographics, Minatec-BHT (France)


Published in SPIE Proceedings Vol. 10959:
Metrology, Inspection, and Process Control for Microlithography XXXIII
Vladimir A. Ukraintsev; Ofer Adan, Editor(s)

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