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Amplitude and phase defect inspection on EUV reticles using RESCAN
Author(s): Iacopo Mochi; Sara Fernandez; Ricarda Nebling; Uldis Locans; Patrick Helfenstein; Rajendran Rajeev; Atoosa Dejkameh; Dimitrios Kazazis; Li-Ting Tseng; Yasin Ekinci
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Paper Abstract

Reliable photomask metrology is required to reduce the risk of yield loss in the semiconductor manufacturing process. Actinic pattern inspection (API) of EUV reticles is a challenging problem to tackle with a conventional approach. For this reason we developed an API platform based on coherent diffraction imaging. Aim: We want to verify the sensitivity of our platform to absorber and phase defects. Approach: We designed and manufactured two EUV mask samples with absorber and phase defects and we inspected them with RESCAN in die-to-database mode. Results: We reconstructed an image of an array of programmed absorber defects and we created a defect map of our sample. We inspected two programmed phase defect samples with buried structures of 3.5 nm and 7.8 nm height. Conclusions: We verified that RESCAN in its current configuration can detect absorber defects in random patterns and buried (phase) defects down to 50 × 50 nm2.

Paper Details

Date Published: 14 March 2019
PDF: 8 pages
Proc. SPIE 10957, Extreme Ultraviolet (EUV) Lithography X, 109570W (14 March 2019); doi: 10.1117/12.2515160
Show Author Affiliations
Iacopo Mochi, Paul Scherrer Institut (Switzerland)
Sara Fernandez, Paul Scherrer Institut (Switzerland)
Ricarda Nebling, Paul Scherrer Institut (Switzerland)
Uldis Locans, Paul Scherrer Institut (Switzerland)
Patrick Helfenstein, Paul Scherrer Institut (Switzerland)
Rajendran Rajeev, Paul Scherrer Institut (Switzerland)
Atoosa Dejkameh, Paul Scherrer Institut (Switzerland)
Dimitrios Kazazis, Paul Scherrer Institut (Switzerland)
Li-Ting Tseng, Paul Scherrer Institut (Switzerland)
Yasin Ekinci, Paul Scherrer Institut (Switzerland)


Published in SPIE Proceedings Vol. 10957:
Extreme Ultraviolet (EUV) Lithography X
Kenneth A. Goldberg, Editor(s)

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