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Improvement of dual insolubilization resist performance through the incorporation of various functional units
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Paper Abstract

The acid diffusion in chemically amplified resists (a current standard resist for semiconductor device manufacturing) is a significant concern in the development of highly resolving resists. However, non-chemically amplified resists (non- CARs) are generally less sensitive to radiation than CARs due to lack of amplification mechanism. Recently, a negativetype non-CAR resist utilizing polarity change and radical crosslinking (a dual insolubilization resist) was proposed. In this study, an acid reactive compound was introduced into the organotin-containing dual insolubilization resists to improve their sensitivity. The synthesized resists were composed of triarylsulfonium cations as a polarity changer and radical generator, 2,2,2-trisubstituted acetophenone as a radical generator, triphenyl(4-vinylphenyl)stannane (TPSnSt) as an EUV absorption enhancer and a quencher, and 4-[(2,4-Dimethoxyphenyl)hydroxymethyl]phenylmethacrylate (ARMA) as a polymer-bound acid-reactive unit. By the incorporation of ARMA, the sensitivity to extreme ultraviolet (EUV) radiation was increased by 2.4 times (the exposure dose for insolubilization was decreased by approximately 60%). The sensitivity enhancement is considered to have been caused by the acid catalytic etherification of ARMA through dimerization and/or with 2,2,2-trisubstituted acetophenone units.

Paper Details

Date Published: 25 March 2019
PDF: 7 pages
Proc. SPIE 10960, Advances in Patterning Materials and Processes XXXVI, 109600D (25 March 2019); doi: 10.1117/12.2515149
Show Author Affiliations
Satoshi Enomoto, Osaka Univ. (Japan)
Photosensitive Materials Research Ctr. (Japan)
Takumi Yoshino, Photosensitive Materials Research Ctr. (Japan)
Kohei Machida, Photosensitive Materials Research Ctr. (Japan)
Takahiro Kozawa, Osaka Univ. (Japan)


Published in SPIE Proceedings Vol. 10960:
Advances in Patterning Materials and Processes XXXVI
Roel Gronheid; Daniel P. Sanders, Editor(s)

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