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Modeling of novel resist technologies
Author(s): Luke Long; Andrew R. Neureuther; Patrick P. Naulleau
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Paper Abstract

In response to the difficulties posed by the resolution, line edge roughness, sensitivity (RLS) trade-off to traditional chemically amplified resist (CAR) systems used for extreme ultraviolet lithography, a number of novel resist technologies have been proposed. In this paper, the effect of quencher loading on three resist technologies is analyzed via an error propagation-based resist simulator. In order of increasing novelty as well as complexity, they are: conventional CAR with quencher, CAR with photodecomposable base, and PSCAR 2.0, a CAR system with photodecomposable base as well as an EUV-activated UV-sensitive resist component. Simulation finds the more complicated resist systems trade in an increase in resist stochastics for improved deprotection slopes, yielding a net benefit in terms of line width roughness.

Paper Details

Date Published: 25 March 2019
PDF: 13 pages
Proc. SPIE 10960, Advances in Patterning Materials and Processes XXXVI, 1096011 (25 March 2019); doi: 10.1117/12.2515144
Show Author Affiliations
Luke Long, Univ. of California, Berkeley (United States)
Lawrence Berkeley National Lab. (United States)
Andrew R. Neureuther, Univ. of California, Berkeley (United States)
Lawrence Berkeley National Lab. (United States)
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 10960:
Advances in Patterning Materials and Processes XXXVI
Roel Gronheid; Daniel P. Sanders, Editor(s)

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