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Laser produced plasma EUV sources for HVM 7nm node lithography: progress in availability and prospects of power scaling
Author(s): Igor V. Fomenkov
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Paper Abstract

In this paper, we provide an overview of state-of-the-art technologies for laser-produced-plasma (LPP) extreme-ultraviolet (EUV) source performance to enable high volume manufacturing of the N7 node and beyond. Source architecture enabling stable and reliable performance at 250 Watts EUV power, and the technical challenges for scaling of key source parameters and subsystems toward 500W will be described. Improvements in availability of droplet generation and the performance of critical subsystems that contribute to Collector lifetime toward the one tera-pulse level, will be shown. Finally, we will describe current research activities and provide a perspective for LPP EUV sources towards the future ASML Scanners.

Paper Details

Date Published: 14 March 2019
PDF
Proc. SPIE 10957, Extreme Ultraviolet (EUV) Lithography X, 1095719 (14 March 2019); doi: 10.1117/12.2515017
Show Author Affiliations
Igor V. Fomenkov, ASML US, LP (United States)


Published in SPIE Proceedings Vol. 10957:
Extreme Ultraviolet (EUV) Lithography X
Kenneth A. Goldberg, Editor(s)

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