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DC and dynamic switching characteristics of field-plated vertical geometry [beta]-Ga2O3 rectifiers
Author(s): Jiancheng Yang; Patrick Carey IV; Fan Ren; Yen-Ting Chen; Y. Liao; Chin-Wei Chang; Jenshan Lin; Marko Tadjer; S. J. Pearton; David J. Smith; Akito Kuramata
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Paper Abstract

Reverse breakdown voltages larger than 1 kV have been reported for both unterminated Ga2O3 vertical rectifiers (1000- 1600 V) and field-plated Schottky diodes (1076-2300 V) with an epi thickness of 8-20 μm. If the doping is in the 1016 cm-3 range, the breakdown is usually in the 500-800V regime. Furthermore, the switching characteristics of discrete Ga2O3 vertical Schottky rectifiers exhibited reverse recovery times in the range of 20 to 30 ns. Large area (up to 0.2 cm2 ) Ga2O3 rectifiers were fabricated on a Si-doped n-Ga2O3 drift layer grown by halide vapor phase epitaxy on a Sn-doped n+ Ga2O3 (001) substrate. A forward current of 2.2 A was achieved in single-sweep voltage mode, a record for Ga2O3 rectifiers. The on-state resistance was 0.26 Ω·cm2 for these largest diodes, decreasing to 5.9 × 10-4 Ω·cm2 for 40x40 μm2 devices. We detail the design and fabrication of these devices. In addition, an inductive load test circuit was used to measure the switching performance of field-plated, edge-terminated Schottky rectifiers with a reverse breakdown voltage of 760 V (0.1 cm diameter, 7.85x10-3 cm2 area) and an absolute forward current of 1 A on 8 Μm thick epitaxial β-Ga2O3 drift layers. These devices were switched from 0.225 A to -700 V with trr of 82 ns, and from 1 A to -300 V with trr of 64 ns and no significant temperature dependence up to 125°C. There was no significant temperature dependence of trr up to 150°C.

Paper Details

Date Published: 1 March 2019
PDF: 8 pages
Proc. SPIE 10919, Oxide-based Materials and Devices X, 1091916 (1 March 2019); doi: 10.1117/12.2515006
Show Author Affiliations
Jiancheng Yang, Univ. of Florida (United States)
Patrick Carey IV, Univ. of Florida (United States)
Fan Ren, Univ. of Florida (United States)
Yen-Ting Chen, National Chiao Tung Univ. (Taiwan)
Y. Liao, National Chiao Tung Univ. (Taiwan)
Chin-Wei Chang, Univ. of Florida (United States)
Jenshan Lin, Univ. of Florida (United States)
Marko Tadjer, U.S. Naval Research Lab. (United States)
S. J. Pearton, Univ. of Florida (United States)
David J. Smith, Arizona State Univ. (United States)
Akito Kuramata, Tamura Corp. (Japan)
Novel Crystal Technology, Inc. (Japan)

Published in SPIE Proceedings Vol. 10919:
Oxide-based Materials and Devices X
David J. Rogers; David C. Look; Ferechteh H. Teherani, Editor(s)

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