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Addressing challenges in the mitigation of stochastic effects
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Paper Abstract

Towards realistic adoption of EUV technology, material/process induced defect must be considerable problem. Several excellent study have been introduced before and it mainly focused on the relation between defect number and pattern size and pattern pitch. Unfortunately, the study related defect transfer behavior haven’t been quite few, despite defect inspection is executed through top-down SEM.

In this study, latent defect on via hole pattern, especially, the behavior of invisible hole bottom area was focused on and we tied to clarify the exist of hidden missing defect utilizing unique RIE technique in hole image transfer onto under layer.

Paper Details

Date Published: 25 March 2019
PDF: 7 pages
Proc. SPIE 10960, Advances in Patterning Materials and Processes XXXVI, 109600K (25 March 2019); doi: 10.1117/12.2514899
Show Author Affiliations
Hidetami Yaegashi, Tokyo Electron Ltd. (Japan)
Arisa Hara, Tokyo Electron Kyushu Ltd. (Japan)


Published in SPIE Proceedings Vol. 10960:
Advances in Patterning Materials and Processes XXXVI
Roel Gronheid; Daniel P. Sanders, Editor(s)

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