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What is prevalent CD-SEM's role in EUV era?
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Paper Abstract

As industry prepares to introduce extreme ultraviolet (EUV) technology for the coming sub-10-nm lithography, this paper presents metrology approaches that utilize the prevalent Critical Dimension Scanning Electron Microscope (CD-SEM). Two technical approaches will be discussed. One is comprehensive solutions for new EUV characterized features, such as low resist-shrinkage electron beam optics and high efficiency metrology/inspection for EUV process monitoring. The other, like conventional minimization processes, is down-to-ångström-order metrology methodologies required for stricter CD process control. This paper is the first to conceptualize specifications for a stringent and multi-index tool matching, namely “atomic matching,” which is considered as a crucially important feature of any in-line metrology tools in the EUV era.

Paper Details

Date Published: 29 March 2019
PDF: 10 pages
Proc. SPIE 10959, Metrology, Inspection, and Process Control for Microlithography XXXIII, 1095914 (29 March 2019); doi: 10.1117/12.2514697
Show Author Affiliations
Zhigang Wang, Hitachi High-Technologies Corp. (Japan)
Yoshinori Momonoi, Hitachi High-Technologies Corp. (Japan)
Katsumi Setoguchi, Hitachi High-Technologies Corp. (Japan)
Makoto Suzuki, Hitachi High-Technologies Corp. (Japan)
Satoru Yamaguchi, Hitachi High-Technologies Corp. (Japan)

Published in SPIE Proceedings Vol. 10959:
Metrology, Inspection, and Process Control for Microlithography XXXIII
Vladimir A. Ukraintsev; Ofer Adan, Editor(s)

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