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Standard-cell design architecture options below 5nm node: The ultimate scaling of FinFET and Nanosheet
Author(s): S. M. Yasser Sherazi; Miroslav Cupak; P. Weckx; O. Zografos; D. Jang; P. Debacker; D. Verkest; A. Mocuta; R. H. Kim; A. Spessot; J. Ryckaert
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Paper Abstract

The targeted N3 technology node at IMEC is being redefined with respect to the poly pitch, as compared to the previous node definitions [1,2]. The overall industry trend of poly pitch scaling is slowing down, due to difficulties in keeping pace with device performance and yield issues. However, the metal pitch continues to scale down, which implies that direct pitch scaling will not lead to the most optimum scaling. Therefore, Standard Cell (SDC) track height reduction is a knob that can be used to achieve advances in the scaling of the technology to preserve Moore’s law. Here we present some of the options for the standard cell design that can enable an N3 technology node by using Design-Technology cooptimization (DTCO).

Paper Details

Date Published: 27 March 2019
PDF: 15 pages
Proc. SPIE 10962, Design-Process-Technology Co-optimization for Manufacturability XIII, 1096202 (27 March 2019); doi: 10.1117/12.2514569
Show Author Affiliations
S. M. Yasser Sherazi, IMEC (Belgium)
Miroslav Cupak, IMEC (Belgium)
P. Weckx, IMEC (Belgium)
O. Zografos, IMEC (Belgium)
D. Jang, IMEC (Belgium)
P. Debacker, IMEC (Belgium)
D. Verkest, IMEC (Belgium)
A. Mocuta, IMEC (Belgium)
R. H. Kim, IMEC (Belgium)
A. Spessot, IMEC (Belgium)
J. Ryckaert, IMEC (Belgium)


Published in SPIE Proceedings Vol. 10962:
Design-Process-Technology Co-optimization for Manufacturability XIII
Jason P. Cain, Editor(s)

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