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Characterizing hysteresis in 2D materials via heavy-tail switching transients in black phosphorous (Conference Presentation)
Author(s): Matthew Grayson; Lintao Peng; Spencer Wells; Mark Hersam
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Paper Abstract

In two-dimensional (2D) materials, such as black phosphorus, the hysteresis attributed to surface and interfacial disorder can severely limit applications in electronics. In this work, we characterize the hysteresis in Al2O3-encapsulated black phosphorous samples by studying conductivity switching transients in response to an applied step gate bias. Using the dispersive diffusion model for relaxation in disordered systems, the so-called bimolecular and unimolecular recombination limits were observed in low-disorder pristine and high-disorder oxidized BP samples, respectively. Two different heavy-tail lineshapes ( the algebraic decay and the stretched exponential relaxation ) were clearly distinguished in the low- and high-disorder limits, respectively. The parameterization of these transients allows temperature dependence of the line-fit parameters to be tracked. If interpreted under the continuous time random walk model, the observed temperature dependence of the dispersion parameter beta would result from a disorder-induced tail of localized trap states.

Paper Details

Date Published: 8 March 2019
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Proc. SPIE 10926, Quantum Sensing and Nano Electronics and Photonics XVI, 109262B (8 March 2019); doi: 10.1117/12.2514105
Show Author Affiliations
Matthew Grayson, Northwestern Univ. (United States)
Lintao Peng, Northwestern Univ. (United States)
Spencer Wells, Northwestern Univ. (United States)
Mark Hersam, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 10926:
Quantum Sensing and Nano Electronics and Photonics XVI
Manijeh Razeghi, Editor(s)

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