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Proceedings Paper

A broadband graphene absorber based on alternating structure of MgF2 and SiO2
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Paper Abstract

We propose a novel absorber with over 90% absorption and is not sensitive to polarization at mid-infrared frequencies (from 31.37 THz to 34.14 THz, 2.77 THz broadwith). The structure of the graphene absorber is special in that it has MgF2 and SiO2 multilayer stacking unit cells and arrayed on an Au film plane, which can be easy to fabricate under current manufacturing technology. We can adjust the position of the absorption bands by tuning the Fermi energy without changing the geometric parameters of the complex three-dimensional structure. The tunability of this metamaterial absorber can be achieved via changing the external gate voltage to modify the Fermi energy of graphene. Simulation results demonstrate that the absorption efficiency of the proposed structure can be as high as more than 90% from 28.7THz to 34.14 THz with variation of the Fermi energy from 1.6 eV to 2.0 eV. At the same time, we can also change the Fermi energy to achieve high absorption or high reflection of the absorber.

Paper Details

Date Published: 9 November 2018
PDF: 8 pages
Proc. SPIE 10826, Infrared, Millimeter-Wave, and Terahertz Technologies V, 1082620 (9 November 2018); doi: 10.1117/12.2513682
Show Author Affiliations
Xiaosu Jiang, Wuhan Univ. of Technology (China)
Key Lab. of Materials for High Power Laser (China)
Zhilin Xia, Wuhan Univ. of Technology (China)
Chaoyang Wei, Key Lab. of Materials for High Power Laser (China)
Dengwu Liu, Wuhan Univ. of Technology (China)


Published in SPIE Proceedings Vol. 10826:
Infrared, Millimeter-Wave, and Terahertz Technologies V
Cunlin Zhang; Xi-Cheng Zhang; Masahiko Tani, Editor(s)

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